c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 www. ruichips .com ru 1 h e3d n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 1 00 v gss gate - source voltage 20 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 3 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 12 a t c =25 c 3 i d continuous drain current t c = 70 c 2.5 a t c =25 c 2.5 p d maximum power dissipation t c = 70 c 1.6 w r q j a thermal resistance - junction to ambient 50 c /w ? 1 00 v/ 3 a, r ds ( on ) = 130 m w (type ) @ v gs =10v r ds ( on ) = 140m w (type) @ v gs = 4.5 v ? esd protected ? reliable and rugged ? ultra low on - resistance ? 100% avalanche tested ? lead free and green available ? power management absolute maximum ratings sot - 223 n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 2 www. ruichips .com ru 1 h e3d electrical characteristics ( t a =25 c unless otherwise noted) ru 1 h e3d symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 1 00 v v ds = 1 00 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1.5 2 2.7 v i gss gate leakage current v gs = 16 v, v ds =0v 10 u a v gs = 10 v, i ds = 3 a 130 1 45 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 2 a 140 180 m w notes : current limited by maximum junction temperature . when mounted on 1 inch square copper boa rd , t 10sec . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to produ ction testing . d iode characteristics v sd diode forward voltage i sd = 2.5 a, v gs =0v 1. 2 v t rr reverse recovery time 4 3 ns q rr reverse recove ry charge i sd = 2.5 a, dl sd /dt=100a/ m s 78 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 0.6 w c iss input capacitance 93 0 c oss output capacitance 85 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 45 pf t d ( on ) turn - on dela y time 13 t r turn - on rise time 1 5 t d ( off ) turn - off delay time 29 t f turn - off fall time v dd = 5 0 v, r l = 30 w , i ds = 3 a, v gen = 10v, r g = 25 w 16 ns gate charge characteristics q g total gate charge 20 26 q gs gate - sourc e charge 5 q gd gate - drain charge v ds = 5 0 v, v gs = 10v, i ds = 3 a 5.9 nc
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 3 www. ruichips .com ru 1 h e3d typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 4 www. ruichips .com ru 1 h e3d typical characteristics output characteristics drain - source on r esistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance ( m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 5 www. ruichips .com ru 1 h e3d typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 6 www. ruichips .com ru 1 h e3d ordering and marking information ru 1he3 package (available) d : sot - 22 3 ; h : s o p - 8 ; operating temperature range c : - 55 to 1 50 oc assembly ma terial g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 7 www. ruichips .com ru 1 h e3d package information so t - 2 23 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.520 1.800 0.060 0.071 e 3.300 3.700 0.130 0.146 a1 0 .000 0.100 0.000 0.004 e1 6.830 7.070 0.269 0.278 a2 1.500 1.700 0.059 0.067 e 2.300(bsc) 0.091(bsc) b 0.660 0.820 0.026 0.032 e1 4.500 4.700 0.177 0.185 c 0.250 0.350 0.010 0.014 l 0.900 1.150 0.035 0.045 d 6.200 6.400 0.244 0.252 0 10 0 10 d1 2.900 3.100 0.114 0.122
c opyright ruichips semiconductor co . , ltd rev . c C mar ., 2011 8 www. ruichips .com ru 1 h e3d customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.co m investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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